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| CY62136VLL Datasheet, PDF (3/12 Pages) Cypress Semiconductor – 128K x 16 Static RAM | |||
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CY62136V MoBLâ¢
Electrical Characteristics Over the Operating Range
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IIX
Input Load Current
IOZ
Output Leakage Current
ICC
VCC Operating Supply
Current
ISB1
Automatic CE
Power-Down Currentâ
CMOS Inputs
ISB2
Automatic CE
Power-Down Currentâ
CMOS Inputs
Test Conditions
IOH = â1.0 mA
VCC = 2.7V
IOL = 2.1 mA
VCC = 2.7V
VCC = 3.6V
VCC = 2.7V
GND < VI < VCC
GND < VO < VCC, Output Disabled
IOUT = 0 mA,
f = fMAX = 1/tRC,
CMOS levels
VCC = 3.6V
IOUT = 0 mA,
f = 1 MHz,
CMOS Levels
CE > VCCâ0.3V,
VIN > VCCâ0.3V or
VIN < 0.3V, f = fMAX
CE > VCCâ0.3V
VIN > VCCâ0.3V
or VIN < 0.3V, f = 0
VCC = LL
3.6V
Min.
2.4
2.2
â0.5
â1
â1
Capacitance[3]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC= VCC(typ)
Thermal Resistance
Description
Test Conditions
Thermal Resistance
(Junction to Ambient)[3]
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer
printed circuit board
Thermal Resistance
(Junction to Case)[3]
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
Symbol
ÎJA
ÎJC
CY62136V
Typ.[2]
Max.
Unit
V
0.4
V
VCC + 0.5V
V
0.8
V
+1
+1
µA
+1
+1
µA
7
15
mA
1
2
mA
100
µA
1
15
µA
Max.
Unit
6
pF
8
pF
BGA
55
16
TSOPII
60
22
Unit
°C/W
°C/W
Document #: 38-05087 Rev. **
Page 3 of 12
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