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| CY7C25632KV18_13 Datasheet, PDF (21/31 Pages) Cypress Semiconductor – 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT | |||
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CY7C25632KV18
CY7C25652KV18
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... â65 °C to +150 °C
Ambient Temperature
with Power Applied .................................. â55 °C to +125 °C
Supply Voltage on VDD Relative to GND .....â0.5 V to +2.9 V
Supply Voltage on VDDQ Relative to GND .... â0.5 V to +VDD
DC Applied to Outputs in High Z ...... â0.5 V to VDDQ + 0.3 V
DC Input Voltage [23] ........................... â0.5 V to VDD + 0.3 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(MIL-STD-883, M. 3015) ......................................... > 2001 V
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature (TA)
0 °C to +70 °C
â40 °C to +85 °C
VDD [24]
1.8 ± 0.1 V
VDDQ [24]
1.4 V to
VDD
Neutron Soft Error Immunity
Parameter
Description
Test
Conditions
Typ
Max*
Unit
LSBU
Logical
Single-Bit
Upsets
25 °C
197 216 FIT/
Mb
LMBU
Logical
Multi-Bit
Upsets
25 °C
0 0.01 FIT/
Mb
SEL
Single Event 85 °C
0 0.1 FIT/
Latch up
Dev
* No LMBU or SEL events occurred during testing; this column represents a
statistical ï£2, 95% confidence limit calculation. For more details refer to
Application Note AN54908 âAccelerated Neutron SER Testing and Calculation of
Terrestrial Failure Ratesâ.
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter [19]
Description
Test Conditions
VDD
VDDQ
VOH
VOL
VOH(LOW)
VOL(LOW)
VIH
VIL
IX
IOZ
VREF
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Note 25
Output LOW Voltage
Note 26
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
IOH =ï ï0.1 mA, Nominal Impedance
IOL = 0.1 mA, Nominal Impedance
Input LOW Voltage
Input Leakage Current
GND ï£ VI ï£ VDDQ
Output Leakage Current GND ï£ VI ï£ VDDQ, Output Disabled
Input Reference Voltage [27] Typical Value = 0.75 V
Min
Typ
Max
Unit
1.7
1.8
1.9
V
1.4
1.5
VDD
V
VDDQ/2 â 0.12 â VDDQ/2 + 0.12 V
VDDQ/2 â 0.12 â VDDQ/2 + 0.12 V
VDDQ â 0.2 â
VDDQ
V
VSS
â
0.2
V
VREF + 0.1 â VDDQ + 0.15 V
â0.15
â VREF â 0.1 V
â2
â
2
ïA
â2
â
2
ïA
0.68
0.75
0.95
V
Notes
23. Overshoot: VIH(AC) < VDDQ + 0.35 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > -0.3 V (Pulse width less than tCYC/2).
24.
25.
Power
Output
up: Assumes a
are impedance
linear ramp from
controlled. IOH =
0ï(VVtDoDVQD/2D)(/m(RinQ) w/5i)thfionr
200 ms. During this time VIH <
values of 175ï ï£ RQ ï£ 350ï.
VDD
and
VDDQ
<
VDD.
26. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175ï ï£ RQ ï£ 350ï.
27. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-66482 Rev. *D
Page 21 of 31
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