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CYIS1SM0250-AA_09 Datasheet, PDF (2/21 Pages) Cypress Semiconductor – CYIS1SM0250-AA STAR250 250K Pixel Radiation Hard CMOS Image Sensor
CYIS1SM0250-AA
Specifications
Table 1. General Specifications
Parameter
Pixel Architecture
Pixel Size
Resolution
Pixel Rate
Shutter Type
Specification
3-transistor active pixel
4 diodes per pixel
25 x 25 μm2
512 by 512 pixels
8 Mps
Electronic
Frame Rate
Extended dynamic range
Programmable gain
Supply voltage VDD
Operational temperature
range
Package
29 full frames/second
Double slope
Programmable between x1, x2, x4, x8
5V
0°C - +65°C
-40°C - +85°C
84 pins JLCC
Remarks
Radiation-tolerant pixel design
4 photodiodes for improved MTF
Integration time is variable in time, steps equal to the row
readout time
Selectable through pins G0 and G1
STAR250 (Quartz glass lid, air in cavity)
STAR250BK7 (BK7G18 glass lid, N2 in cavity)
Table 2. Electro-optical Specifications
Parameter
Detector Technology
Pixel Structure
Photodiode
Sensitive Area Format
Pixel Size
Spectral Range
Quantum Efficiency x Fill
Factor
Full Well Capacity
Linear Range within + 1%
Output Signal Swing
Conversion Gain
Temporal Noise
Dynamic Range
FPN (Fixed Pattern Noise)
PRNU (Photo Response
Non-uniformity)
Average Dark Current
Signal
DSNU (Dark Signal Non
Uniformity)
MTF
Optical Cross Talk
Specification (Typical)
CMOS Active Pixel Sensor
3-transistor active pixel
4 diodes per pixel
High fill factor photodiode
512 by 512 pixels
25 x 25 μm2
200 - 1000 nm
Max. 35%
311K electrons
128K electrons
1.68 V
5.7 μV/e-
76 e-
74 dB (5000:1)
1 < 0.1% of full well
(typical)
Local: 1 = 0.39% of response
Global: 1 = 1.3% of response
4750 e-/s
3805 e-/s RMS
Horizontal: 0.36
Vertical: 0.39
5% (TBC) to nearest neighbor if central
pixel is homogeneously illuminated
Comment
Radiation-tolerant pixel design
4 Photodiodes for improved MTF
See Figure 1 and Figure 2
Above 20% between 450 and 750 nm
(Note: Metal FillFactor (MFF) is 63%)
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1 near dark
Dominated by kTC
At the analog output
Measured local, on central image area 50% of pixels, in
the dark
Measured in central image area 50% of pixels, at Qsat/2
At RT
At RT, scale linearly with integration time
at 600 nm.
Document Number: 38-05713 Rev. *C
Page 2 of 21
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