CYIS1SM0250-AA Datasheet, PDF (2/24 Pages) Cypress Semiconductor – 250K Pixel Radiation Hard CMOS Image Sensor

CYIS1SM0250-AA
Specifications
General Specifications
Table 1. General Specifications
Parameter
Specification
Remarks
Pixel Architecture
Pixel Size
Resolution
Pixel Rate
Shutter Type
Frame Rate
Extended dynamic range
3-transistor active pixel
4 diodes per pixel
25 x 25 µm²
512 by 512 pixels
8 Mps
Electronic
29 full frames/second
Double slope
Radiation-tolerant pixel design
4 photodiodes for improved MTF
Integration time is variable in time, steps equal to the row
readout time
Programmable gain
Supply voltage VDD
Operational temperature
range
Package
Programmable between x1, x2, x4, x8 Selectable through pins G0 and G1
5V
0°C - +65°C
STAR250 (Quartz glass lid, air in cavity)
-40°C - +85°C
84 pins JLCC
STAR250BK7 (BK7G18 glass lid, N₂ in cavity)
Electro-optical Specifications
Overview
Table 2. Electro-optical Specifications
Parameter
Specification (all typical)
Detector Technology
CMOS Active Pixel Sensor
Pixel Structure
3-transistor active pixel
4 diodes per pixel
Photodiode
High fill factor photodiode
Sensitive Area Format
Pixel Size
512 by 512 pixels
25 x 25 µm²
Spectral Range
200 - 1000 nm
Quantum Efficiency x Fill
Factor
Max. 35%
Full Well Capacity
311K electrons
Linear Range within + 1%
128K electrons
Output Signal Swing
Conversion Gain
Temporal Noise
1.68 V
5.7 µV/e^-
76 e^-
Dynamic Range
74 dB (5000:1)
Comment
Radiation-tolerant pixel design
4 Photodiodes for improved MTF
See curves
Above 20% between 450 and 750 nm
(Note: Metal FillFactor (MFF) is 63%)
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1 near dark
Dominated by kTC
At the analog output
Document Number: 38-05713 Rev. *B
Page 2 of 24
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