CY14MB064Q_12 Datasheet, PDF (18/30 Pages) Cypress Semiconductor – 64-Kbit (8 K × 8) SPI nvSRAM

CY14MB064Q
CY14ME064Q
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ...................... 1000 h
At 85 C ambient temperature .................... 20 Years
Ambient temperature with
power applied .......................................... –55 C to +150 C
Supply voltage on V_CC relative to V_SS
CY14MB064Q: ..................................–0.5 V to +4.1 V
CY14ME064Q: ..................................–0.5 V to +7.0 V
DC voltage applied to outputs
in High Z state .................................... –0.5 V to V_CC + 0.5 V
Input voltage ....................................... –0.5 V to V_CC + 0.5 V
Transient voltage (<20 ns) on
any pin to ground potential ................. –2.0 V to V_CC + 2.0 V
Package power dissipation
capability (T_A = 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch-up current .................................................... > 140 mA
Operating Range
Device
Range
CY14MB064Q Industrial
CY14ME064Q
Ambient
Temperature
V_CC
–40 C to +85 C 2.7 V to 3.6 V
4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ ^[4]
Max Unit
V_CC
Power supply
CY14MB064Q
2.7
3.0
3.6
V
CY14ME064Q
4.5
5.0
5.5
V
I_CC1
Average V_CC current
f_SCK = 40 MHz; CY14MB064Q
–
–
3
mA
Values obtained _CY14ME064Q
–
–
4
mA
without output
loads (I_OUT = 0 mA)
I_CC2
Average V_CC current during
All inputs don’t care, V_CC = Max
–
–
3
mA
STORE
Average current for duration t_STORE
I_CC3
Average V_CC current,
All inputs cycling at CMOS levels.
–
–
1
mA
f_SCK = 1 MHz,
Values obtained without output
V_CC = V_CC(Typ), 25 °C
loads (I_OUT = 0 mA)
I_CC4
Average V_CAP current during All inputs don't care. Average
–
–
3
mA
AutoStore cycle
current for duration t_STORE
I_SB
V_CC standby current
CS > (V_CC – 0.2 V).
–
–
150
A
V_IN < 0.2 V or > (V_CC – 0.2 V).
Standby current level after
nonvolatile cycle is complete.
Inputs are static. f_SCK = 0 MHz.
I_ZZ
Sleep mode current
t_SLEEP time after SLEEP Instruction
–
–
8
A
is registered. All inputs are static
and configured at CMOS logic level.
I_IX[5]
Input leakage current (except
HSB)
–1
–
+1
A
Input leakage current (for HSB)
–100
–
+1
A
I_OZ
Off-state output leakage current
–1
–
+1
A
V_IH
Input HIGH voltage
2.0
–
V_CC + 0.5 V
V_IL
Input LOW voltage
V_ss – 0.5
–
0.8
V
V_OH
Output HIGH Voltage
I_OUT = –2 mA
CY14MB064Q
2.4
–
–
V
CY14ME064Q V_CC – 0.4
–
–
V_OL
Output LOW voltage
I_OUT = 4 mA
–
–
0.4
V
Notes
4. Typical values are at 25 °C, V_CC = V_CC(Typ). Not 100% tested.
5. The HSB pin has I_OUT = -2 µA for V_OH of 2.4 V when both active high and LOW drivers are disabled. When they are enabled standard V_OH and V_OL are valid. This
parameter is characterized but not tested.
Document Number: 001-65018 Rev. *D
Page 18 of 30