CY14B108K_11 Datasheet, PDF (17/31 Pages) Cypress Semiconductor – 8 Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock

CY14B108K, CY14B108M
Data Retention and Endurance
Parameter
DATA_R
NV_C
Description
Data retention
Nonvolatile STORE operations
Min
20
1,000
Capacitance
In the following table, the capacitance parameters are listed. ^[14]
Parameter
C_IN
C_OUT
Description
Input capacitance
Output capacitance
Test Conditions
T_A = 25 °C, f = 1 MHz,
V_CC = V_CC (Typ)
Unit
Years
K
Max
Unit
14
pF
14
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.^[14]
Parameter
Θ_JA
Θ_JC
Description
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Test Conditions
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, in
accordance with EIA/JESD51.
44 TSOP II 54 TSOP II
45.3
44.22
5.2
8.26
Unit
°C/W
°C/W
Figure 6. AC Test Loads
3.0 V
OUTPUT
30 pF
577 Ω
R1
R2
789 Ω
3.0 V
OUTPUT
5 pF
577 Ω
R1
R2
789 Ω
AC Test Conditions
Input pulse levels....................................................0 V to 3 V
Input rise and fall times (10% - 90%)............................ <3 ns
Input and output timing reference levels........................ 1.5 V
Note
14. These parameters are only guaranteed by design and are not tested.
Document #: 001-47378 Rev. *F
Page 17 of 31
[+] Feedback