S6E2C5 Datasheet, PDF (114/200 Pages) Cypress Semiconductor – 32-bit ARM® Cortex®-M4F FM4 Microcontroller

S6E2C5 Series
12.4.2 Sub Clock Input Characteristics
(VBAT = 1.65V to 5.5V, VSS = 0V)
Parameter
Symbol
Pin
Name
Conditions
Min
Value
Typ
Max
Unit
Remarks
Input frequency
Input clock cycle
Input clock pulse width
1/tCYLL
tCYLL
-
X0A,
X1A
-
-
-
PWH/tCYLL,
PWL/tCYLL
When crystal
-
32.768
-
kHz oscillator is
connected *
32
-
100
kHz
When using external
clock
10
-
31.25
μs
When using external
clock
45
-
55
%
When using external
clock
*: For more information about crystal oscillator, see Sub crystal oscillator in 7. Handling Devices.
0.8 × V_BAT
X0A
P_WH
t _CYLL
0.8 × V_BAT
0.2 × V_BAT
P_WL
0.8 × V_BAT
0.2 × V_BAT
12.4.3 Built-In CR Oscillation Characteristics
Built-In High-speed CR
Parameter
Symbol
Conditions
(VCC = 2.7V to 5.5V, VSS = 0V)
Value
Unit
Min
Typ
Max
Remarks
TJ = - 20°C to + 105°C
3.92
4
4.08
When trimming ^*1
Clock frequency
fCRH
TJ = - 40°C to + 125°C
3.88
4
4.12 MHz
Frequency
stabilization
time
TJ = - 40°C to + 125°C
3
tCRWT
-
-
4
5
When not
trimming
-
30
μs *2
1 : In the case of using the values in CR trimming area of flash memory at shipment for frequency/temperature trimming
2 : This is the time to stabilize the frequency of the High-speed CR clock after setting trimming value. During this period, it is
able to use the High-speed CR clock as a source clock.
Built-In Low-speed CR
Parameter
Symbol
Clock frequency
fCRL
Condition
-
Value
Unit
Min Typ Max
50 100 150
kHz
(VCC = 2.7V to 5.5V, VSS = 0V)
Remarks
Document Number: 002-04984 Rev.*A
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