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CY7C11611KV18 Datasheet, PDF (11/29 Pages) Cypress Semiconductor – 18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) | |||
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CY7C11611KV18, CY7C11761KV18
CY7C11631KV18, CY7C11651KV18
The truth table for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows. [3, 4, 5, 6, 7, 8]
Table 3. Truth Table
Operation
K RPS WPS
DQ
DQ
DQ
DQ
Write Cycle:
L-H H [9] L [10] D(A) at K(t + 1)ï D(A + 1) at K(t + 1)ï D(A + 2) at K(t + 2)ï D(A + 3) at K(t + 2)ï
Load address on the rising
edge of K; input write data
on two consecutive K and
K rising edges.
Read Cycle:
L-H L [10] X Q(A) at K(t + 2)ï Q(A + 1) at K(t + 3)ï Q(A + 2) at K(t + 3)ï Q(A + 3) at K(t + 4)ï
(2.5 cycle Latency)
Load address on the rising
edge of K; wait two and
half cycles; read data on
two consecutive K and K
rising edges.
NOP: No Operation
L-H H H D = X
Q = High Z
D=X
Q = High Z
D=X
Q = High Z
D=X
Q = High Z
Standby: Clock Stopped Stopped X X Previous State Previous State
Previous State
Previous State
The write cycle description table for CY7C11611KV18 and CY7C11631KV18 follows. [3, 11]
Table 4. Write Cycle Descriptions
BWS0/ BWS1/ K
NWS0 NWS1
K
Comments
L
L LâH â During the data portion of a write sequenceïº
CY7C11611KV18 ïï both nibbles (D[7:0]) are written into the device.
CY7C11631KV18 ïï both bytes (D[17:0]) are written into the device.
L
L
â L-H During the data portion of a write sequenceïº
CY7C11611KV18 ïï both nibbles (D[7:0]) are written into the device.
CY7C11631KV18 ïï both bytes (D[17:0]) are written into the device.
L
H LâH â During the data portion of a write sequenceïº
CY7C11611KV18 ïï only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C11631KV18 ïï only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L
H
â LâH During the data portion of a write sequenceïº
CY7C11611KV18 ïï only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C11631KV18 ïï only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
H
L LâH â During the data portion of a write sequenceïº
CY7C11611KV18 ïï only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C11631KV18 ïï only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
L
â LâH During the data portion of a write sequenceïº
CY7C11611KV18 ïï only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C11631KV18 ïï only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
H LâH â No data is written into the devices during this portion of a write operation.
H
H
â LâH No data is written into the devices during this portion of a write operation.
Notes
3. X = âDon't Care,â H = Logic HIGH, L = Logic LOW, ïrepresents rising edge.
4. Device powers up deselected with the outputs in a tristate condition.
5. âAâ represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst.
6. âtâ represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the âtâ clock cycle.
7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well.
8. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
9. If this signal was LOW to initiate the previous cycle, this signal becomes a âDonât Careâ for this operation.
10. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
second read or write request.
11.
Is based
cycle, as
on a
long
write cycle that was initiated in accordance with Table
as the setup and hold requirements are achieved.
4.
NWS0,
NWS1,
BWS0,
BWS1,
BWS2,
and
BWS3
can
be
altered
on
different
portions
of
a
write
Document Number: 001-53197 Rev. *C
Page 11 of 29
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