CY14B256LA_11 Datasheet, PDF (10/22 Pages) Cypress Semiconductor – 256-Kbit (32 K × 8) nvSRAM

CY14B256LA
Data Retention and Endurance
Parameter
DATA_R
NV_C
Description
Data retention
Nonvolatile STORE operations
Min
20
1,000
Unit
Years
K
Capacitance
Parameter^[10]
C_IN
C_OUT
Description
Input capacitance
Output capacitance
Test Conditions
T_A = 25 °C, f = 1 MHz,
V_CC = V_CC (Typ)
Max
Unit
7
pF
7
pF
Thermal Resistance
Parameter^[10]
Θ_JA
Θ_JC
Description
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
Test Conditions
48-SSOP 44-TSOP II
Test conditions follow standard
test methods and procedures for
measuring thermal impedance, in
accordance with EIA/JESD51.
37.47
24.71
31.11
5.56
32-SOIC
41.55
24.43
Unit
°C/W
°C/W
Figure 4. AC Test Loads
3.0 V
OUTPUT
30 pF
577 Ω
R1
R2
789 Ω
3.0 V
OUTPUT
5 pF
577 Ω
R1
For tristate specs
R2
789 Ω
AC Test Conditions
Input Pulse Levels .................................................. 0 V to 3 V
Input Rise and Fall Times (10% - 90%)........................ <3 ns
Input and Output Timing Reference Levels ................... 1.5 V
Note
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-54707 Rev. *F
Page 10 of 22
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