CYDM064B16_08 Datasheet, PDF (1/24 Pages) Cypress Semiconductor – 1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL® Dual-Port Static RAM

CYDM064B16, CYDM128B16, CYDM256B16
1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL^®
Dual-Port Static RAM
Features
■ True dual-ported memory cells that allow simultaneous access
of the same memory location
■ 4, 8, or 16K × 16 organization
■ Ultra Low operating power
❐ Active: ICC = 15 mA (typical) at 55 ns
❐ Standby: I_SB3 = 2 μA (typical)
■ Small footprint: Available in a 6x6 mm 100-pin Pb-free vfBGA
■ Port independent 1.8V, 2.5V, and 3.0V IOs
■ Full asynchronous operation
■ Automatic power down
■ Pin select for Master or Slave
■ Expandable data bus to 32 bits with Master or Slave chip select
when using more than one device
■ On-chip arbitration logic
■ Semaphores included to permit software handshaking
between ports
■ Input read registers and output drive registers
■ INT flag for port-to-port communication
■ Separate upper-byte and lower-byte control
■ Industrial temperature ranges
Selection Guide for V_CC = 1.8V
Parameter
CYDM256B16, CYDM128B16, CYDM064B16
Unit
(-55)
Port IO Voltages (P1-P2)
1.8V -1.8V
V
Maximum Access Time
55
ns
Typical Operating Current
15
mA
Typical Standby Current for I_SB1
2
μA
Typical Standby Current for I_SB3
2
μA
Selection Guide for V_CC = 2.5V
Parameter
CYDM256B16, CYDM128B16, CYDM064B16
Unit
(-55)
Port IO Voltages (P1-P2)
2.5V-2.5V
V
Maximum Access Time
55
ns
Typical Operating Current
28
mA
Typical Standby Current for I_SB1
6
μA
Typical Standby Current for I_SB3
4
μA
Selection Guide for V_CC = 3.0V
Parameter
CYDM256B16, CYDM128B16, CYDM064B16
Unit
(-55)
Port IO Voltages (P1-P2)
3.0V-3.0V
V
Maximum Access Time
55
ns
Typical Operating Current
42
mA
Typical Standby Current for I_SB1
7
μA
Typical Standby Current for I_SB3
6
μA
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-00217 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised July 31, 2008
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