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CY7C187_06 Datasheet, PDF (1/9 Pages) Cypress Semiconductor – 64K x 1 Static RAM
CY7C187
64K x 1 Static RAM
Features
• High speed
— 15 ns
• CMOS for optimum speed/power
• Low active power
— 495 mW
• Low standby power
— 110 mW
• TTL compatible inputs and outputs
• Automatic power-down when deselected
• Available in Pb-free and non Pb-free 22-pin (300-Mil)
Molded DIP and 24-pin (300-Mil) Molded SOJ
Logic Block Diagram
Functional Description
The CY7C187 is a high-performance CMOS static RAM
organized as 65,536 words x 1 bit. Easy memory expansion is
provided by an active LOW Chip Enable (CE) and tri-state
drivers. The CY7C187 has an automatic power-down feature,
reducing the power consumption by 56% when deselected.
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW. Data on the
input pin (DIN) is written into the memory location specified on
the address pins (A0 through A15).
Reading the device is accomplished by taking the Chip Enable
(CE) LOW, while Write Enable (WE) remains HIGH. Under
these conditions, the contents of the memory location
specified on the address pin will appear on the data output
(DOUT) pin.
The output pin stays in high-impedance state when Chip
Enable (CE) is HIGH or Write Enable (WE) is LOW.
The CY7C187 utilizes a die coat to insure alpha immunity.
Pin Configurations
INPUT BUFFER
A12
A13
A14
A15
16K x 1
A0
ARRAY
A1
A2
A3
COLUMN DECODER
POWER
DOWN
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
DI
DO
CE
WE
C187–1
SOJ
Top View
DIP
Top View
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
NC 7
A6 8
A7 9
DOUT 10
WE 11
GND 12
24 VCC
A0 1
23 A15
A1 2
22 A14
A2 3
21 A13
A3 4
20 A12
A4 5
19 NC
A5 6
18 A11
A6 7
17 A10
A7 8
16 A9
DOUT 9
15 A8
WE 10
14 DIN
13 CE
GND 11
22 VCC
21 A15
20 A14
19 A13
18 A12
17 A11
16 A10
15 A9
14 A8
13 DIN
12 CE
C187–3
C187–2
-15
-25
-35
15
25
35
90
70
70
20
20
20
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05044 Rev. *A
Revised July 24, 2006
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