CY7C1516AV18 Datasheet, PDF (1/28 Pages) Cypress Semiconductor – 72-Mbit DDR-II SRAM 2-Word Burst Architecture

PRELIMINARY
CY7C1516AV18
CY7C1527AV18
CY7C1518AV18
CY7C1520AV18
72-Mbit DDR-II SRAM 2-Word Burst
Architecture
Features
Functional Description
• 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
• 300-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Synchronous internally self-timed writes
• DDR-II operates with 1.5 cycle read latency when DLL
is enabled
• Operates like a DDR I device with 1 cycle read latency
in DLL off mode
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–V_DD)
• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)
• Offered in both lead-free and non lead-free packages
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1516AV18 – 8M x 8
CY7C1527AV18 – 8M x 9
CY7C1518AV18 – 4M x 18
CY7C1520AV18 – 2M x 36
The CY7C1516AV18, CY7C1527AV18, CY7C1518AV18 and
CY7C1520AV18 are 1.8V Synchronous Pipelined SRAM
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry
and a 1-bit burst counter. Addresses for Read and Write are
latched on alternate rising edges of the input (K) clock.Write
data is registered on the rising edges of both K and K. Read
data is driven on the rising edges of C and C if provided, or on
the rising edge of K and K if C/C are not provided. Each
address location is associated with two 8-bit words in the case
of CY7C1516AV18 and two 9-bit words in the case of
CY7C1527AV18 that burst sequentially into or out of the
device. The burst counter always starts with a “0” internally in
the case of CY7C1516AV18 and CY7C1527AV18. On
CY7C1518AV18 and CY7C1520AV18, the burst counter takes
in the least significant bit of the external address and bursts
two 18-bit words in the case of CY7C1518AV18 and two 36-bit
words in the case of CY7C1520AV18 sequentially into or out
of the device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR SRAM in
the system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06982 Rev. *B
Revised September 20, 2006
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