CY7C1510JV18_09 Datasheet, PDF (1/26 Pages) Cypress Semiconductor – 72-Mbit QDR™-II SRAM 2-Word Burst Architecture

CY7C1510JV18, CY7C1525JV18
CY7C1512JV18, CY7C1514JV18
72-Mbit QDR™-II SRAM 2-Word
Burst Architecture
Features
■ Separate Independent Read and Write Data Ports
❐ Supports concurrent transactions
■ 267 MHz Clock for High Bandwidth
■ 2-word Burst on all Accesses
■ Double Data Rate (DDR) Interfaces on both Read and Write
Ports (data transferred at 534 MHz) at 267 MHz
■ Two Input Clocks (K and K) for Precise DDR Timing
❐ SRAM uses rising edges only
■ Two Input Clocks for Output Data (C and C) to Minimize Clock
Skew and Flight Time Mismatches
■ Echo Clocks (CQ and CQ) Simplify Data Capture in High Speed
Systems
■ Single Multiplexed Address Input Bus Latches Address Inputs
for both Read and Write Ports
■ Separate Port Selects for Depth Expansion
■ Synchronous Internally Self-timed Writes
■ QDR-II Operates with 1.5 Cycle Read Latency when Delay
Lock Loop (DLL) is enabled
■ Operates like a QDR-I Device with 1 Cycle Read Latency in
DLL Off Mode
■ Available in x8, x9, x18, and x36 Configurations
■ Full Data Coherency, providing most current data
■ Core V_DD = 1.8V (±0.1V); I/O V_DDQ = 1.4V to V_DD
■ Available in 165-Ball FBGA Package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free Packages
■ Variable Drive HSTL Output Buffers
■ JTAG 1149.1 Compatible Test Access Port
■ Delay Lock Loop (DLL) for Accurate Data Placement
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
x8
x9
x18
x36
Configurations
CY7C1510JV18 – 8M x 8
CY7C1525JV18 – 8M x 9
CY7C1512JV18 – 4M x 18
CY7C1514JV18 – 2M x 36
Functional Description
The CY7C1510JV18, CY7C1525JV18, CY7C1512JV18, and
CY7C1514JV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR-II architecture. QDR-II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR-II architecture has
separate data inputs and data outputs to eliminate the need to
‘turnaround’ the data bus that exists with common I/O devices.
Access to each port is through a common address bus.
Addresses for read and write addresses are latched on alternate
rising edges of the input (K) clock. Accesses to the QDR-II read
and write ports are completely independent of one another. To
maximize data throughput, both read and write ports are
equipped with DDR interfaces. Each address location is
associated with two 8-bit words (CY7C1510JV18), 9-bit words
(CY7C1525JV18), 18-bit words (CY7C1512JV18), or 36-bit
words (CY7C1514JV18) that burst sequentially into or out of the
device. Because data is transferred into and out of the device on
every rising edge of both input clocks (K and K and C and C),
memory bandwidth is maximized while simplifying system
design by eliminating bus ‘turnarounds’.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
267 MHz
267
1375
1385
1495
1710
250 MHz
250
1245
1255
1365
1580
Unit
MHz
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-14435 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised July 31, 2009
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