CY7C1371D_07 Datasheet, PDF (1/29 Pages) Cypress Semiconductor – 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture

CY7C1371D
CY7C1373D
18-Mbit (512K x 36/1M x 18)
Flow-Through SRAM with NoBL™ Architecture
Features
Functional Description^[1]
• No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
• Supports up to 133-MHz bus operations with zero wait
states
— Data is transferred on every clock
• Pin-compatible and functionally equivalent to ZBT™
devices
• Internally self-timed output buffer control to eliminate the
need to use OE
• Registered inputs for flow through operation
• Byte Write capability
• 3.3V/2.5V IO power supply (V_DDQ)
• Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
• Clock Enable (CEN) pin to enable clock and suspend
operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Available in JEDEC-standard Pb-free 100-pin TQFP,
Pb-free and non-Pb-free 119-Ball BGA and 165-Ball FBGA
package.
• Three chip enables for simple depth expansion
• Automatic Power down feature available using ZZ mode or
CE deselect
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• Burst Capability — linear or interleaved burst order
• Low standby power
The CY7C1371D/CY7C1373D is a 3.3V, 512K x 36/1M x 18
Synchronous flow through Burst SRAM designed specifically
to support unlimited true back-to-back Read/Write operations
with no wait state insertion. The CY7C1371D/CY7C1373D is
equipped with the advanced No Bus Latency (NoBL) logic
required to enable consecutive Read/Write operations with
data being transferred on every clock cycle. This feature
dramatically improves the throughput of data through the
SRAM, especially in systems that require frequent Write-Read
transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two or four Byte Write
Select (BW_X) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE₁, CE₂, CE₃) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
133 MHz
100 MHz
Unit
6.5
8.5
ns
210
175
mA
70
70
mA
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05556 Rev. *F
• 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Revised July 09, 2007