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CY7C1361C_12 Datasheet, PDF (1/34 Pages) Cypress Semiconductor – 9-Mbit (256 K × 36/512 K × 18) Flow-Through SRAM
CY7C1361C, CY7C1363C
9-Mbit (256 K × 36/512 K × 18)
Flow-Through SRAM
9-Mbit (256 K × 36/512 K × 18) Flow-through SRAM
Features
■ Supports 100 MHz, 133 MHz bus operations
■ Supports 100 MHz bus operations (Automotive)
■ 256 K × 36/512 K × 18 common I/O
■ 3.3 V – 5% and +10% core power supply (VDD)
■ 2.5 V or 3.3 V I/O power supply (VDDQ)
■ Fast clock-to-output times
❐ 6.5 ns (133-MHz version)
■ Provide high performance 2-1-1-1 access rate
■ User-selectable burst counter supporting Intel Pentium
interleaved or linear burst sequences
■ Separate processor and controller address strobes
■ Synchronous self-timed write
■ Asynchronous output enable
■ Available in Pb-free 100-pin TQFP package and non Pb-free
119-ball BGA package
■ TQFP available with 3-chip enable and 2-chip enable
■ IEEE 1149.1 JTAG-compatible boundary scan
■ “ZZ” sleep mode option
Functional Description
The CY7C1361C/CY7C1363C is a 3.3 V, 256 K × 36/512 K × 18
synchronous flow-through SRAMs, respectively designed to
interface with high speed microprocessors with minimum glue
logic. Maximum access delay from clock rise is 6.5 ns (133 MHz
version). A 2-bit on-chip counter captures the first address in a
burst and increments the address automatically for the rest of the
burst access. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered clock input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining
enables (CE2 and
chip enable
CE3[1]), burst
(CE1),
control
depth-expansion chip
inputs (ADSC, ADSP,
and ADV), write enables (BWx, and BWE), and global write
(GW). Asynchronous inputs include the output enable (OE) and
the ZZ pin.
The CY7C1361C/CY7C1363C enables either interleaved or
linear burst sequences, selected by the MODE input pin. A HIGH
selects an interleaved burst sequence, while a LOW selects a
linear burst sequence. Burst accesses can be initiated with the
processor address strobe (ADSP) or the cache controller
address strobe (ADSC) inputs. Address advancement is
controlled by the address advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or address
strobe controller (ADSC) are active. Subsequent burst
addresses can be internally generated as controlled by the
advance pin (ADV).
The CY7C1361C/CY7C1363C operates from a +3.3 V core
power supply while all outputs may operate with either a +2.5 or
+3.3 V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
Maximum access time
Maximum operating current
Maximum CMOS standby current
Description
Commercial/Industrial
Automotive
133 MHz
6.5
250
40
–
100 MHz Unit
8.5
ns
180
mA
40
mA
60
mA
Note
1. CE3 is for A version of 100-pin TQFP (3 Chip Enable Option). 119-ball BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 38-05541 Rev. *M
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 24, 2012