CY15B256Q Datasheet, PDF (1/22 Pages) Cypress Semiconductor – 256-Kbit (32K × 8) Automotive Serial (SPI) F-RAM

CY15B256Q
256-Kbit (32K × 8) Automotive Serial (SPI)
F-RAM
256-Kbit (32K × 8) Automotive Serial (SPI) F-RAM
Features
Functional Description
■ 256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
❐ High-endurance 100 trillion (10¹⁴) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write-protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Device ID
❐ Manufacturer ID and Product ID
■ Low power consumption
❐ 2.5-mA active current at 40 MHz
❐ 150-A standby current
❐ 8-A sleep mode current
■ Low-voltage operation: V_DD = 2.0 V to 3.6 V
■ Automotive-A temperature: –40 C to +85 C
■ 8-pin small outline integrated circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
The CY15B256Q is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the CY15B256Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15B256Q is capable of supporting
10¹⁴ read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the CY15B256Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15B256Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15B256Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
automotive-a range of –40 C to +85 C.
For a complete list of related documentation, click here.
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
32 K x 8
F-RAM Array
Instruction Register
Address Register
15
8
Counter
SI
SO
Data I/O Register
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-90867 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 13, 2016