CY14E256LA_11 Datasheet, PDF (1/19 Pages) Cypress Semiconductor – 256-Kbit (32 K × 8) Nonvolatile SRAM

CY14E256LA
256-Kbit (32 K × 8) Nonvolatile SRAM
256-Kbit (32 K × 8) Nonvolatile SRAM
Features
■ 25 ns and 45 ns access times
■ Internally organized as 32 K × 8 (CY14E256LA)
■ Hands-off automatic STORE on power-down with only a small
capacitor
■ STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or autostore on power-down
■ RECALL to SRAM initiated by software or power-up
■ Infinite read, write, and RECALL cycles
■ 1 million STORE cycles to QuantumTrap
■ 20-year data retention
■ Single 5 V +10% operation
■ Industrial temperature
■ 44-pin thin small-outline package (TSOP II) and 32-pin
small-outline integrated circuit (SOIC) package
■ Pb-free and restriction of hazardous substances (RoHS)
compliant
Logic Block Diagram
Functional Description
The Cypress CY14E256LA is a fast static RAM, with a
nonvolatile element in each memory cell. The memory is
organized as 32 KB. The embedded nonvolatile elements
incorporate QuantumTrap technology, producing the world’s
most reliable nonvolatile memory. The SRAM provides infinite
read and write cycles, while independent nonvolatile data
resides in the highly reliable QuantumTrap cell. Data transfers
from the SRAM to the nonvolatile elements (the STORE
operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-54952 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 17, 2011
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