CY14E064L_07 Datasheet, PDF (1/17 Pages) Cypress Semiconductor – 64 Kbit (8K x 8) nvSRAM

CY14E064L
64 Kbit (8K x 8) nvSRAM
Features
■ 25 ns and 45 ns access times
■ Hands off automatic STORE on power down with external
68 mF capacitor
■ STORE to QuantumTrap® non-volatile elements is initiated
by software, hardware or AutoStore on power down
■ RECALL to SRAM initiated by software or power up
■ Unlimited READ, WRITE and RECALL cycles
■ 10 mA typical ICC at 200 ns cycle time
■ 1,000,000 STORE cycles to QuantumTrap
■ 100 year data retention to QuantumTrap
■ Single 5V operation +10%
■ Commercial temperature
■ SOIC package
■ RoHS compliance
Functional Description
The Cypress CY14E064L is a fast static RAM with a
non-volatile element in each memory cell. The embedded
non-volatile elements incorporate QuantumTrap technology
producing the world’s most reliable non-volatile memory. The
SRAM provides unlimited read and write cycles, while
independent, non-volatile data resides in the highly reliable
QuantumTrap cell. Data transfers from the SRAM to the
non-volatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the non-volatile
memory. Both the STORE and RECALL operations are also
available under software control. A hardware STORE is
initiated with the HSB pin.
Logic Block Diagram
A₅
A₆
A₇
A₈
A₉
A ₁₁
A ₁₂
DQ ₀
DQ ₁
DQ ₂
DQ ₃
DQ ₄
DQ ₅
DQ ₆
DQ ₇
Quantum Trap
128 X 512
STORE
STATIC RAM
ARRAY
128 X 512
RECALL
COLUMN I/O
COLUMN DEC
A₀ A₁ A₂ A₃ A₄ A₁₀
V_CC
V_CAP
POWER
CONTROL
STORE/
RECALL
CONTROL
HSB
SOFTWARE
DETECT
- A₀ A₁₂
OE
CE
WE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-06543 Rev. *D
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 7, 2007
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