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CY14B256LA Datasheet, PDF (1/21 Pages) Cypress Semiconductor – 256 Kbit (32K x 8) nvSRAM
CY14B256LA
256 Kbit (32K x 8) nvSRAM
Features
■ 25 ns and 45 ns Access Times
■ Internally Organized as 32K x 8 (CY14B256LA)
■ Hands off Automatic STORE on Power Down with only a Small
Capacitor
■ STORE to QuantumTrap Nonvolatile Elements Initiated by
Software, Device Pin, or AutoStore on Power Down
■ RECALL to SRAM Initiated by Software or Power Up
■ Infinite Read, Write, and Recall Cycles
■ 1 Million STORE Cycles to QuantumTrap
■ 20 year Data Retention
■ Single 3V +20% to -10% Operation
■ Industrial Temperature
■ 44-Pin TSOP - II, 48-Pin SSOP, and 32-Pin SOIC Packages
■ Pb-free and RoHS Compliance
Functional Description
The Cypress CY14B256LA is a fast static RAM, with a nonvol-
atile element in each memory cell. The memory is organized as
32K bytes of 8 bits each. The embedded nonvolatile elements
incorporate QuantumTrap technology, producing the world’s
most reliable nonvolatile memory. The SRAM provides infinite
read and write cycles, while independent nonvolatile data
resides in the highly reliable QuantumTrap cell. Data transfers
from the SRAM to the nonvolatile elements (the STORE
operation) takes place automatically at power down. On power
up, data is restored to the SRAM (the RECALL operation) from
the nonvolatile memory. Both the STORE and RECALL opera-
tions are also available under software control.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-54707 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 08, 2009
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