CY14B104L_09 Datasheet, PDF (1/25 Pages) Cypress Semiconductor – 4 Mbit (512K x 8/256K x 16) nvSRAM

CY14B104L, CY14B104N
4 Mbit (512K x 8/256K x 16) nvSRAM
Features
■ 20 ns, 25 ns, and 45 ns Access Times
■ Internally organized as 512K x 8 (CY14B104L) or 256K x 16
(CY14B104N)
■ Hands off Automatic STORE on power down with only a small
Capacitor
■ STORE to QuantumTrap^® nonvolatile elements initiated by
software, device pin, or AutoStore^® on power down
■ RECALL to SRAM initiated by software or power up
■ Infinite Read, Write, and Recall Cycles
■ 200,000 STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3V +20% to –10% operation
■ Commercial and Industrial Temperatures
■ 48-ball FBGA and 44/54-pin TSOP II packages
■ Pb-free and RoHS compliance
Functional Description
The Cypress CY14B104L/CY14B104N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 512K bytes of 8 bits each or 256K words of 16 bits
each. The embedded nonvolatile elements incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data resides in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
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Notes
1. Address A₀ - A₁₈ for x8 configuration and Address A₀ - A₁₇ for x16 configuration.
2. Data DQ₀ - DQ₇ for x8 configuration and Data DQ₀ - DQ₁₅ for x16 configuration.
3. BHE and BLE are applicable for x16 configuration only.
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-07102 Rev. *L
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 19, 2008
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