DS-72-04 Datasheet, PDF (7/16 Pages) Cymbet Corporation – EnerChip CC with Integrated Power Management

EnerChip CC CBC3112
CHARGE PUMP CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
ENABLE=VDD to Charge
Pump Active
ENABLE Falling to
Charge Pump Inactive
Charge Pump Frequency
Charge Pump
Resistance
VCHG Output Voltage
VCHG Temp. Coefficient
Charge Pump Current
Drive
Charge Pump on Voltage
(1) _{fCP = 1/tCPPER}
SYMBOL
tCPON
tCPOFF
fCP
RCP
VCP
TCCP
ICP
VENABLE
CONDITION
ENABLE to 3rd charge pump
pulse, VDD=3.3V
-
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
IOUT=1µA, Temp=+25ºC
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
ENABLE=VDD
MIN
60
0
-
150
MAX
80
UNITS
µs
1
µs
120
KHz ⁽¹⁾
300
Ω
4.075
-2.0
1.0
2.5
4.125
-2.4
-
-
V
mV/ºC
mA
V
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC SYMBOL
CONDITION
VBAT Cutoff Threshold
Cutoff Temp. Coefficient
VBAT Cutoff Delay Time
VOUT Dead Time, VDD
Rising ⁽²⁾
VOUT Dead Time, VDD
Falling ⁽²⁾
VBATCO
TCCO
tCOOFF
tRSBR
tRSBF
IOUT=1µA
-
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
IOUT=1mA
VBAT=4.1V
VBAT=4.1V
LIMITS
MIN MAX
2.75 3.25
+1
+2
UNITS
V
mV/ºC
18
-
ms
0.2
2.0
µs
0.2
2.0
µs
Bypass Resistance
ROUT
-
-
2.5
Ω
(2) _{Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly.}
Note: All specifications contained within this document are subject to change without notice
©2009-2014 Cymbet Corporation • Tel: [phone] • www.cymbet.com
DS-72-04 Rev H

Page 7 of 16