CT3401A-R3 Datasheet, PDF (4/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CT3401A-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
VSD
Body Diode Forward Voltage
ISD
Body Diode Continuous Current
VGS = 0V, ISD = -1.0A
Note:
℃ 1.The power dissipation is limited by 150 junction temperature.
2.Device mounted on a glass-epoxy board
Min
Typ
Max Units Notes
1.2
V
-4.2
A
1
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Test Board
3.The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%
4. Thermal Resistance follow JESD51-3.
CT Micro
Proprietary & Confidential
Page 4
Rev 2
Aug, 2015