CT3401A-R3 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CT3401A-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= - 0.25µA
VDS = -30V, VGS = 0V
VGS = ±12V, VDS = 0V
Min Typ Max Units Notes
-30
-
-
V
-
-
-1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -1.0A
VGS = VDS, ID = -250µA
Min
Typ
Max Units Notes
-
33
50
mΩ
-
38
60
mΩ
3
-
51
85
mΩ
-0.47
-
-1.3
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = - 10V ,
VGS = 0V,
f=1MHz
Min
Typ
Max Units Notes
-
1320
-
-
88
-
pF
-
72
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
Min
Typ
Max Units Notes
-
10.7
-
VDS = -15V , VGS = - 10V,
-
11.2
-
ns
RG = 3Ω, ID = -4.2A
-
47.1
-
-
6.7
-
12.4
-
VDS = -4.5V , VGS = -105,
-
2.9
-
nC
ID = -4.2A
-
3.5
-
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Aug, 2015