CT2N7002E-R3 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2N7002E-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= 250µA
VDS = 60V, VGS = 0V
VGS = ±16V, VDS = 0V
Min Typ Max Units Notes
60
-
-
V
-
-
1
µA
-
-
10
µA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 500mA
VGS = 5.0V, ID = 500mA
VGS = VDS, ID =250µA
Min
Typ
Max Units Notes
-
4.15
7.5
Ω
3
-
4.7
7.5
Ω
1.0
2.0
3.0
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = 25V ,
VGS = 0V,
f=1MHz
Min
Typ
Max Units Notes
-
17
-
-
6
-
pF
-
10
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 15V , VGS = 10V,
RG = 25Ω, ID =500mA
VDS = 15V , VGS = 5V,
ID = 500mA
Min
Typ
Max Units Notes
-
1.4
-
-
16.3
-
ns
-
4.4
-
-
10
-
0.06
-
-
0.43
-
nC
-
0.12
-
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Jun, 2015