CT2N7002E-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2N7002E-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 60 V
• Drain-Source On-Resistance
RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA
RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA
℃ • Continuous Drain Current at TA=25 ,ID = 500mA
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
• ESD protection
Applications
• Cellular phone
• Notebook
• Power management
Description
The CT2N7002E-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015