CT2301-R3 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CT2301-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS=0V, ID= - 0.25µA
VDS = -20V, VGS = 0V
VGS = ±12`V, VDS = 0V
Min Typ Max Units Notes
-20
-
-
V
-
-
-1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH) Gate-Source Threshold Voltage
Test Conditions
VGS = -4.5V, ID = -3.0A
VGS = -2.5V, ID = -2.0A
VGS = VDS, ID = -0.25µA
Min
Typ
Max Units Notes
-
85
100
mΩ
-
100
150
mΩ
3
-0.4
-
-0.9
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VDS = - 8V ,
VGS = 0V,
f=1MHz
Min
Typ
Max Units Notes
-
640
-
-
59
-
pF
-
70
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
Min
Typ
Max Units Notes
-
4
-
VDS = -10V , VGS = - 4.5V,
-
28.2
-
ns
RG = 4.7Ω, ID = -2.8A
-
27.1
-
-
9.2
-
7.65
-
VDS = -4.5V , VGS = -10V,
-
1.1
-
nC
ID = -2.8A
-
1.95
-
CT Micro
Proprietary & Confidential
Page 3
Rev 4
Aug, 2015