CT2301-R3 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – P-Channel Enhancement MOSFET

CT2301-R3
P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 20 V
• Drain-Source On-Resistance
RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A
RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A
℃ • Continuous Drain Current at TA=25 ID = - 3.0A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• Portable Equipment
• Battery Powered System
• Load Switch
Description
The CT2301-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 4
Aug, 2015