CGH40045_15 Datasheet, PDF (6/15 Pages) Cree, Inc – 45 W, RF Power GaN HEMT

Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH40045
V_DD = 28 V, I_DQ = 400 mA
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CGH40045 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
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