CGH40045_15 Datasheet, PDF (1/15 Pages) Cree, Inc – 45 W, RF Power GaN HEMT

CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities
making the CGH40045 ideal for linear and compressed amplifier circuits. The
transistor is available in a flange and pill package.
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FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 12 dB Small Signal Gain at 4.0 GHz
• 55 W Typical P_SAT
• 55 % Efficiency at P_SAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
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