CGH25120F Datasheet, PDF (6/12 Pages) Cree, Inc – 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
Z Source
Z Load
2300
2350
6.80 - j12.19
6.42 - j11.89
4.38 - j1.42
4.39 - j1.36
2400
2450
6.05 - j11.61
5.71 - j11.34
4.39 - j1.33
4.36 - j1.32
2500
2550
5.37 - j11.08
5.04 - j10.83
4.31 - j1.33
4.23 - j1.34
2600
4.71 - j10.57
4.11 - j1.36
2650
2700
4.39 - j10.31
4.07 - j10.04
3.98 - j1.37
3.80 - j1.36
Note¹: V_DD = 28V, I_DQ = 500mA. In the 440162 package.
Note²: Impedances are extracted from CGH25120F-AMP demonstration circuit
and are not source and load pull data derived from transistor.
CGH25120F Power Dissipation De-rating Curve
CGH25120F Average Power Dissipation De-rating Curve
70
60
50
40
30
Note 1
20
10
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGH25120F Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf