CGH25120F Datasheet, PDF (1/12 Pages) Cree, Inc – 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

CGH25120F
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE
Cree’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: _2454102106F2
Typical Performance Over 2.3-2.7GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 43 dBm
12.5
12.8
13.1
13.5
13.6
dB
ACLR @ 43 dBm
-32.7
-34.0
-32.5
-29.5
-25.8
dBc
Drain Efficiency @ 43 dBm
26.5
28.0
30.0
32.5
34.5
%
Note:
Measured in the CGH25120F-AMP amplifier circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth,
PAR = 9.6 dB @ 0.01 % Probability on CCDF.
Features
• 2.3 - 2.7 GHz Operation
• 13 dB Gain
• -32 dBc ACLR at 20 W P_AVE
• 30 % Efficiency at 20 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/wireless
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