C3M0065100K Datasheet, PDF (5/11 Pages) Cree, Inc – Silicon Carbide Power MOSFET C3MTM MOSFET Technology

Typical Performance
-8
-7
-6
-5
-4
-3
-2
-1
0
0
V_GS = 0 V
V_GS = 5 V
-10
-20
V_GS = 10 V
-30
-40
V_GS = 15 V
-50
Drain-Source Voltage V_DS (V)
-60
Conditions:
T_J = -55 °C
-70
t_p < 200 µs
-80
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-8
-7
-6
-5
-4
-3
-2
-1
0
0
V_GS = 0 V
-10
-20
-30
V_GS = 5 V
V_GS = 10 V
-40
V_GS = 15 V
-50
Drain-Source Voltage V_DS (V)
-60
Conditions:
T_J = 150 °C
-70
t_p < 200 µs
-80
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
1000
Conditions:
T_J = 25 °C
V_AC = 25 mV
f = 1 MHz
C_iss
C_oss
100
C_rss
10
1
0
50
100
150
200
Drain-Source Voltage, V_DS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
-8
-7
-6
-5
-4
-3
-2
-1
0
0
V_GS = 0 V
V_GS = 5 V
-10
-20
-30
V_GS = 10 V
-40
V_GS = 15 V
-50
Drain-Source Voltage V_DS (V)
-60
Conditions:
T_J = 25 °C
-70
t_p < 200 µs
-80
Figure 14. 3rd Quadrant Characteristic at 25 ºC
35
30
25
20
15
10
5
0
0
200
400
600
800
Drain to Source Voltage, V_DS (V)
1000
Figure 16. Output Capacitor Stored Energy
10000
1000
Conditions:
T_J = 25 °C
V_AC = 25 mV
f = 1 MHz
C_iss
100
C_oss
10
C_rss
1
0
200
400
600
800
1000
Drain-Source Voltage, V_DS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
5
C3M0065100K Rev. -, 09-2016