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C3M0065100K Datasheet, PDF (1/11 Pages) Cree, Inc – Silicon Carbide Power MOSFET C3MTM MOSFET Technology | |||
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VDS
1000 V
C3M0065100K
ID @ 25ËC
35 A
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
RDS(on)
65 mâ¦
N-Channel Enhancement Mode
Features
Package
⢠New C3MTM SiC MOSFET technology
⢠Optimized package with separate driver source pin
TAB
Drain
⢠8mm of creepage distance between drain and source
⢠High blocking voltage with low on-resistance
⢠High-speed switching with low capacitances
â¢
â¢
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
⢠Reduce switching losses and minimize gate ringing
⢠Higher system efficiency
⢠Reduce cooling requirements
⢠Increase power density
⢠Increase system switching frequency
Applications
⢠Renewable energy
⢠EV battery chargers
⢠High voltage DC/DC converters
⢠Switch Mode Power Supplies
1 234
D SSG
Drain
(Pin 1, TAB)
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Part Number
C3M0065100K
Package
TO 247-4
Marking
C3M0065100K
Maximum Ratings (TC = 25 ËC unless otherwise specified)
Symbol
Parameter
Value
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
ID
Continuous Drain Current
1000
-8/+19
-4/+15
35
22.5
ID(pulse) Pulsed Drain Current
90
EAS
Avalanche energy, Single pulse
PD
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL
Solder Temperature
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
110
113.5
-55 to
+150
260
Unit
Test Conditions
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25ËC
A
VGS = 15 V, TC = 100ËC
A Pulse width tP limited by Tjmax
mJ ID = 22A, VDD = 50V
W TC=25ËC, TJ = 150 ËC
ËC
ËC 1.6mm (0.063â) from case for 10s
Note
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20
1
C3M0065100K Rev. -, 09-2016
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