PT62SCMD12 Datasheet, PDF (4/12 Pages) Cree, Inc – Dual 1200V SIC MOSFET driver

1.3. Protections
1.3.1. Under Voltage Lock Out (UVLO)
Both secondary sides are equipped with an UVLO indirectly monitoring the gate voltages.
Table 1-8, UVLO
Item
Description
Min
Typ
Max Unit
VUVLO,SEC Secondary side under voltage lock out
16
18
-
[V]
Remarks
Only positive
voltage is
monitored
The primary side is equipped with an UVLO and an OVLO (Over Voltage Lock Out) monitoring an
internally generated supply voltage.
1.3.2. Dead-time generator
The driver has an on-board dead-time generator which overrules the input signals when the dead-
time of the applied PWM signals (tDEAD,IN) becomes larger than the set dead-time (tDEAD,PROG). Note
that when the dead-time generator has to intervene, the jitter increases to a maximum of 10ns.
The dead time is by default set at 500ns, but can be changed by modifying R901 and R902. See
chapter 4 for application information.
Table 1-9 Dead time settings
R901
not assembled
not assembled
assembled
assembled
R902
not assembled
assembled
not assembled
assembled
tDEAD
unit
Remarks
1000 [ns]
-
500
[ns]
Default setting
250
[ns]
-
-
[ns] Dead time disabled
1.3.3. Over Current Protection (OCP)
The driver features VDS monitoring for protecting the modules against overcurrent. Both the
blanking time (time the monitor is not-active when switching on), as the VDS level (proportional with
IDS) is user-adjustable.
Table 1-10 VDS monitoring
Item
Description
Min
Typ
Max Unit
Remarks
VDS,TRIP
Default VDS trip level PT62SCMD12
-
4
-
[V]
tBLANKING
tSHUTDOWN
Default Blanking time
Delay between a detected over current
0.75
-
1
-
1.25
1
[us]
[us]
See Figure 1-6
and a shutdown of the driver
tSTATUS
Delay between an over current
-
-
100
[us]
protection and a low going STATUS at
-
the primary side.
Datasheet PT62SCMD12 SIC MOSFET driver R08
© 2014 Prodrive Technologies B.V.
15 September 2014
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