CAS300M17BM2 Datasheet, PDF (4/9 Pages) Cree, Inc – Half-Bridge Module

Typical Performance
3.5
Conditions
V_DS = 10 V
3.0
I_DS = 01.55mmAA
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature T_J (°C)
Figure 7. Threshold Voltage vs. Temperature
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
400
Conditions:
V_DS = 20 V
tp = 200 µs
300
200
100
T_J = 150 °C
T_J = 25 °C
T_J = -40 °C
0
0
2
4
6
8
10
12
14
16
Gate-Source Voltage, V_GS (V)
Figure 8. Transfer Characteristic for Various
Junction Temperatures
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
V_GS = -5 V
V_GS = 0 V
V_GS = -2 V
-100
-200
-300
-400
Conditions:
T_J = -40 °C
t_p = 200 µs
-500
-600
Drain-Source Voltage V_DS (V)
Figure 9. Diode Characteristic at -40 ˚C
-100
-200
V_GS = 0 V
V_GS = -2 V
V_GS = -5 V
Drain-Source Voltage V_DS (V)
Conditions:
T_J = 25°C
t_p = 200 µs
-300
-400
-500
-600
Figure 10. Diode Characteristic at 25 ˚C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
V_GS = 0 V
-100
V_GS = 5 V
-100
V_GS = -5 V
V_GS = 0 V
V_GS = -2 V
-200
-300
-400
V_GS = 10 V
V_GS = 20 V
V_GS = 15 V
-200
-300
-400
Conditions:
T_J = 150°C
t_p = 200 µs
-500
-600
Drain-Source Voltage V_DS (V)
Figure 11. Diode Characteristic at 150 ˚C
Drain-Source Voltage V_DS (V)
Conditions:
T_J = -2450°C°C
t_p = 200 µs
-500
-600
Figure 12. 3^rd Quadrant Characteristic at -40 ˚C
4
CAS300M17BM2,Rev. -