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| CAS300M17BM2 Datasheet, PDF (1/9 Pages) Cree, Inc – Half-Bridge Module | |||
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CAS300M17BM2
1.7kV, 8.0 m⦠All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec® Diode
VDS
Esw, Total @ 300A, 150 ËC
RDS(on)
1.7 kV
23.7 mJ
8.0 mâ¦
Features
⢠Ultra Low Loss
⢠High-Frequency Operation
⢠Zero Reverse Recovery Current from Diode
⢠Zero Turn-off Tail Current from MOSFET
⢠Normally-off, Fail-safe Device Operation
⢠Ease of Paralleling
⢠Copper Baseplate and Aluminum Nitride Insulator
System Benefits
⢠Enables Compact and Lightweight Systems
⢠High Efficiency Operation
⢠Mitigates Over-voltage Protection
⢠Reduced Thermal Requirements
⢠Reduced System Cost
Package 62mm x 106mm x 30mm
Applications
⢠HF Resonant Converters/Inverters
⢠Solar and Wind Inverters
⢠UPS and SMPS
⢠Motor Drive
⢠Traction
Part Number
Package
Marking
CAS300M17BM2 Half-Bridge Module CAS300M17BM2
Maximum Ratings (TC = 25ËC unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID
Continuous MOSFET Drain Current
ID(pulse)
Pulsed Drain Current
IF
Continuous Diode Forward Current
TJmax
Junction Temperature
TC ,TSTG
Visol
Case and Storage Temperature Range
Case Isolation Voltage
LStray
Stray Inductance
PD
Power Dissipation
1.7
-10/+25
-5/20
325
225
900
556
353
-40 to +150
kV
V Absolute maximum values
V Recommended operational values
VGS = 20 V, TC = 25 ËC
A
VGS = 20 V, TC = 90 ËC
A Pulse width tp limited by TJ(max)
VGS = -5 V, TC = 25 ËC
A
VGS = -5 V, TC = 90 ËC
ËC
-40 to +125
4.5
ËC
kV AC, 50 Hz , 1 min
15
nH Measured between terminals 2 and 3
1760
W TC = 25 ËC, TJ = 150 ËC
Fig. 26
Fig. 27
Fig. 25
Subject to change without notice.
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