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C4D30120D Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode | |||
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Typical Performance (Per Leg)
440.00
335.50
330.00
225.50
220.00
115.50
110.00
5.50
0.00
00220000440000 660000880000 11000000
VR ReVveRrse(VVolt)age (V)
Figure 7. Typical Capacitance Stored Energy
11000000
110000
TJ = 25°C
TJ = 110°C
1100
11.EE-0-505 1E1.-E0-044 1E1.-E0-0331E1-.0E-202
tp (stp)(s)
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
1
0.1
0.01
0.001
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D30120D Rev. B
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