C4D30120D Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C4D30120D
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
V_RRM = 1200 V
I_F (T_C=135˚C) =  43A^**
Q_c
=155nC^**
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Switching
Package
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
TO-247-3
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives
Part Number
C4D30120D
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Package
TO-247-3
Marking
C4D30120
Test Conditions
Note
V_RRM
V_RSM
V_R
I_F
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
Continuous Forward Current
(Per Leg/Device)
I_FRM
Repetitive Peak Forward Surge Current
I_FSM
Non-Repetitive Forward Surge Current
I_F,Max
Non-Repetitive Peak Forward Current
P_tot
Power Dissipation (Per Leg/Device)
T_J
Operating Junction Range
T_stg
Storage Temperature Range
TO-247 Mounting Torque
* _{Per Leg,} ** _{Per Device}
1200
V
1300
V
1200
V
44/88
21.5/43
15/30
68*
44*
100*
85*
900*
750*
220/440
95/190
-55 to
+175
-55 to
+135
1
8.8
T_C=25˚C
A T_C=135˚C
T_C=152˚C
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
A
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
A
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
1
C4D30120D Rev. B