C4D10120D_14 Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
141.04
121.02
101.00
8.08
6.06
4.04
2.0²
0.00
0₀20₂₀0₀40₄₀0₀ 6₆0₀₀08₈0₀₀0 1₁0₀0₀₀0
V_R R_Veve_Rrse₍V_Vol₎tage (V)
Figure 7. Typical Capacitance Stored Energy, per leg
1
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
11000000
1₁0₀₀0
T_J = 25°C
T_J = 110°C
1100
1_1.E_E--₀0₅51E_1.-_E0_-04₄ 1E₁-_.0_E-3₀₃ 1E₁-_.0_E-2₀₂
t_pt(ps(s))
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform), per leg
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
Tim_Te,₍t_{Sp e}(s_c)₎
Figure 9. Device Transient Thermal Impedance
4
C4D10120D Rev. F