C4D10120D_14 Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics (Per Leg)
Symbol Parameter
V_F
Forward Voltage
I_R
Reverse Current
Q_C
Total Capacitive Charge
C
Total Capacitance
Typ.
1.4
1.9
20
40
27
390
27
20
Max.
1.8
3
150
300
Unit
V
μA
nC
pF
Test Conditions
I_F = 5 A T_J=25°C
I_F = 5 A T_J=175°C
V_R = 1200 V T_J=25°C
V_R = 1200 V T_J=175°C
V_R = 800 V, I_F = 5A
di/dt = 200 A/μs
T_J = 25°C
V_R = 0 V, T_J = 25°C, f = 1 MHz
V_R = 400 V, T_J = 25˚C, f = 1 MHz
V_R = 800 V, T_J = 25˚C, f = 1 MHz
Note
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance from Junction
to Case
* _{Per Leg,} ** _{Per Device}
Typ.
1.6*
0.8**
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance (Per Leg)
10
9
T_J=-55°C
T_J= 25°C
T_J= 75°C
8
T_J =125°C
T_J =175°C
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5
V^Vol_Fta⁽ge^V(V⁾)
Figure 1. Forward Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
500
1000
1500
V_R (VVol)tage (V)
2000
Figure 2. Reverse Characteristics
2
C4D10120D Rev. F