C4D08120A_14 Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
220.00
118.80
116.60
114.40
112.20
110.00
8.80
6.60
4.40
2.20
0.00
0₀2₂0₀₀04₄0₀0₀ 6₆₀0₀08₈0₀₀0 1₁0₀0₀₀0
V_R Re_Vve_Rrse₍V_Volt₎age (V)
Figure 7. Typical Capacitance Stored Energy
1¹0⁰⁰0⁰0
110000
T_J = 25°C
T_J = 110°C
100
11.EE-0-505 1E1.-E0-044 1E1.-E0-0331E1-.0E-202
t_p (s^tp)^(s)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
1
0.5
0.3
0.1
100E-3 0.05
0.02
10E-3 ^0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
Tim_T e₍, _St_pe(_cs₎)
Figure 9. Transient Thermal Impedance
4
C4D08120A Rev. A