C4D08120A_14 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C4D08120A
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
V_RRM =
1200 V
I_F (T_C=135˚C) = 11 A
Q_c
=37 nC
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Solar Inverters
• UPS
• Motor Drives
Package
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C4D08120A
Package
TO-220-2
Marking
C4D08120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_RRM
V_RSM
V_R
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
I_F
Continuous Forward Current
I_FRM
I_FSM
I_F,Max
P_tot
T_J
T_stg
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Operating Junction Range
Storage Temperature Range
TO-220 Mounting Torque
1200
V
1300
V
1200
V
23
11
8
37.5
25
64
49.5
600
480
120
52
-55 to
+175
-55 to
+135
1
8.8
A
A
A
A
W
˚C
˚C
Nm
lbf-in
T_C=25˚C
T_C=135˚C
T_C=153˚C
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
T_C=25˚C, t_P=10 ms, Half Sine Pulse
T_C=110˚C, t_P=10 ms, Half Sine Pulse
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
T_C=25˚C
T_C=110˚C
M3 Screw
6-32 Screw
1
C4D08120A Rev. A