C4D08120A Datasheet, PDF (4/5 Pages) Cree, Inc – Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

10
1
0.1
0.01
0.001
0.0001
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
10
T (Sec)
Figure 7. Transient Thermal Impedance
Diode Model
Diode Model CSD04060
V_T
R_T
Vf _T = V_T + If*R_T
V_T= 0.965 +^V(^fT^T_j *⁼-1^V.3^T*1⁺0^-3I)^{f * RT}
R_T= 0.096 + (T_j * 1.06*10^-3)
V_T = 0.96 + (T_j * -2.1*10^-3)
R_T = 0.06 + (T_j * 8.0*10^-4)
Note: T_j is diode junction temperature in degrees Celsius
4
C4D08120A Rev. -