C4D08120A Datasheet, PDF (2/5 Pages) Cree, Inc – Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Electrical Characteristics
Symbol Parameter
V_F
Forward Voltage
I_R
Reverse Current
Q_C
Total Capacitive Charge
C
Total Capacitance
Typ.
1.5
2.2
35
100
49
560
37
27
Max.
1.8
3
250
350
Unit
V
μA
nC
pF
Test Conditions
I_F = 7.5 A T_J=25°C
I_F = 7.5 A T_J=175°C
V_R = 1200 V T_J=25°C
V_R = 1200 V T_J=175°C
V_R = 1200 V, I_F = 7.5A
di/dt = 200 A/μs
T_J = 25°C
V_R = 0 V, T_J = 25°C, f = 1 MHz
V_R = 400 V, T_J = 25˚C, f = 1 MHz
V_R = 800 V, T_J = 25˚C, f = 1 MHz
1. Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
R_θJC
Thermal Resistance from Junction
to Case
Typ.
1.26
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
14
T_J=-55°C
12
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V_F (V)
Figure 1. Forward Characteristics
800
700
600
500
400
300
T_J=-55°C
T_J= 25°C
T_J= 75°C
200
T_J =125°C
T_J =175°C
100
0
0
500
1000
1500
2000
V_R (V)
Figure 2. Reverse Characteristics
2
C4D08120A Rev. -