C4D02120A_14 Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
6.₆0
5.⁵0
4.40
3.30
2.20
1.10
0.00
0₀ 2₂0₀₀04₄0₀0₀ 6₆₀0₀08₈0₀₀0 1₁0₀0₀₀0
V_R Re_Vve_Rrse₍V_Volt₎age (V)
Figure 7. Typical Capacitance Stored Energy
11000000
110000
T_J = 25°C
T_J = 110°C
1100
11E.E--0055 11E.E--0044 11E.E--0033 11E.E--0022
t_p t(ps(s))
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
0.5
1 _0.3
0.1
0.05
100E-3 _0.02
0.01
10E-3
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D02120A Rev. C