C4D02120A_14 Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
V_F
Forward Voltage
1.4
1.9
1.8
3
V
I_F = 2 A T_J=25°C
I_F = 2 A T_J=175°C
I_R
Reverse Current
10
40
50
150
μA
V_R = 1200 VT_J=25°C
V_R = 1200 VT_J=175°C
Q_C
Total Capacitive Charge
11
V_R = 800 V, I_F = 2A
nC di/dt = 200 A/μs
T_J = 25°C
C
Total Capacitance
167
11
8
V_R = 0 V, T_J = 25°C, f = 1 MHz
pF V_R = 400 V, T_J = 25˚C, f = 1 MHz
V_R = 800 V, T_J = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
R_θJC
Thermal Resistance from Junction
to Case
Typ.
2.5
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
4
3.5
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
3
T_J =175°C
2.5
2
1.5
1
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5
V_F ForVw_Fa(rdVV)oltage
Figure 1. Forward Characteristics
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
T_J =175°C
500
1000
1500
V_R Rev^Ver_Rse^(VVo⁾ltage (V)
Figure 2. Reverse Characteristics
2
C4D02120A Rev. C