C3D10060A_15 Datasheet, PDF (4/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Typical Performance
10
9
8
7
6
5
4
3
2
1
0
0 100 200 300 400 500 600 700
Reverse_VV_Ro₍lta_Vg₎e, V_R (V)
Figure 7. Capacitance Stored Energy
1,000
100 _{TJ_initial = 25 °C}
T_{J_initial} = 110 °C
10
10E-6
100E-6
1E-3
10E-3
T^tipm⁽e,^st⁾_p (s)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
1
0.5
0.3
0.1
100E-3
0.05
0.02
10E-3 0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1
Tim_Te,₍t_Spe(s_c)₎
Figure 9. Transient Thermal Impedance
4
C3D10060A Rev. E, 12-2015