C3D10060A_15 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C3D10060A
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 600-Volt Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Boost diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
Package
V_RRM
= 600 V
I_F (T_C=135˚C) =14.5 A
Q_c = 24 nC
TO-220-2

PIN 1
PIN 2
Part Number
C3D10060A
CASE
Package
TO-220-2
Marking
C3D10060
Maximum Ratings (T_C = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
V_RRM
Repetitive Peak Reverse Voltage
V_RSM
Surge Peak Reverse Voltage
V_DC
DC Blocking Voltage
I_F
Continuous Forward Current
I_FRM
I_FSM
I_F,Max
P_tot
T_J , T_stg
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
V
600
V
600
V
30
14.5
10
46
31
90
71
860
680
136.5
59
-55 to
+175
1
8.8
T_C=25˚C
A T_C=135˚C
T_C=153˚C
A
T_C=25˚C, t_P = 10 ms, Half Sine Wave
T_C=110˚C, t_P=10 ms, Half Sine Wave
A
T_C=25˚C, t_p = 10 ms, Half Sine Wave
T_C=110˚C, t_p = 10 ms, Half Sine Wave
A
T_C=25˚C, t_P = 10 µs, Pulse
T_C=110˚C, t_P = 10 µs, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1
C3D10060A Rev. E, 12-2015