CPW5-1200-Z050B Datasheet, PDF (3/4 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

Typical Performance
100
75
50
T_J = 175 °C
T_J = 125 °C
T_J = 75 °C
25
T_J = 25 °C
T_J = -55 °C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Foward Voltage, V_F (V)
Figure 1. Typical Forward Characteristics
4000
3500
3000
2500
2000
1500
1000
500
0
0.1
Conditions:
T_J = 25 °C
F_test = 1 MHz
V_test = 25 mV
1
10
100
1000
Reverse Voltage, V_R (V)
Figure 3. Typical Capacitance vs. Reverse Voltage
1
0.8
T_J = 175 °C
0.6
T_J = 125 °C
T_J = 75 °C
0.4
T_J = 25 °C
0.2
T_J = -55 °C
0
0
200
400
600
800
1000
1200
1400
Reverse Voltage, V_R (V)
Figure 2. Typical Reverse Characteristics
250
Conditions:
T_J = 25 °C
200
150
100
50
0
0
100
200
300
400
500
600
700
800
Reverse Voltage, V_R (V)
Figure 4. Typical Recovery Charge vs.
Reverse Voltage
3
CPW5-1200-Z050B Rev. A