CPW5-1200-Z050B Datasheet, PDF (1/4 Pages) Cree, Inc – Silicon Carbide Schottky Diode Chip

CPW5-1200-Z050B
Silicon Carbide Schottky Diode Chip
Z-Rec^® Rectifier
Features
Chip Outline
• 1200-Volt Schottky Rectifier
• Zero Reverse Recovery
• Zero Forward Recovery
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on V_F
V_RRM = 1200 V
I_F = 50 A
Q_c = 246 nC
Part Number
CPW5-1200-Z050B
Die Size
4.9 x 4.9 mm²
Anode
Al
Cathode
Ni/Ag
Maximum Ratings
Symbol Parameter
Value Unit
Test Conditions
V_RRM
Repetitive Peak Reverse Voltage
1200 V
V_RSM
Surge Peak Reverse Voltage
1200 V
V_R
DC Peak Blocking Voltage
1300 V
I_F
Continuous Forward Current
50
A T_J=175˚C
T_J , T_stg
Operating Junction and Storage Temperature
-55 to
+175
˚C
T_Proc
Maximum Processing Temperature
325
˚C 10 min Maximum
Note
1
Note:
1. Assumes R_θJCThermal Resistance < 0.25˚C/W and T_C = 145 ˚C
1
CPW5-1200-Z050B Rev. A